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| Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.40+0.10 n0.05 0.16+0.10 -0.06 1.50+0.25 -0.05 s Features q q 3 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 10 2.8+0.2 -0.3 1 2 (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 1.1+0.2 -0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 5 30 200 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector 0 to 0.1 1.1+0.3 -0.1 s Absolute Maximum Ratings (Ta=25C) (0.65) EIAJ:SC-59 Mini3-G1 Package Marking symbol : K s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Transition frequency Common emitter reverse transfer capacitance (Ta=25C) Symbol VCBO VCEO VEBO hFE fT Cre * Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 1mA VCB = 10V, IE = -1mA, f = 200MHz VCE = 10V, IC = 1mA, f = 10.7MHz min 30 20 5 70 150 typ max Unit V V V 250 230 1.3 MHz pF *h FE Rank classification Rank hFE B 70 ~ 160 KB C 110 ~ 250 KC Marking Symbol 373 0.40.2 5 Transistor PC -- Ta 240 12 Ta=25C 200 10 IB=100A 80A 8 60A 6 40A 10 2SC2778 IC -- VCE 12 VCE=10V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 160 Collector current IC (mA) 18 8 120 6 80 4 4 40 2 20A 2 0 0 20 40 60 80 100 120 140 160 0 0 6 12 0 0 60 120 180 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (A) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 60 VCE=10V 50 100 30 10 3 1 0.3 VCE(sat) -- IC IC/IB=10 300 hFE -- IC VCE=10V Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 -25C 100 Collector current IC (mA) 40 25C 30 Ta=75C 20 -25C Ta=75C 25C 0.1 -25C 0.03 0.01 0.1 10 50 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 600 Ta=25C 80 Zrb -- IE Common emitter reverse transfer capacitance Cre (pF) 2.4 Cre -- VCE f=2MHz Ta=25C IC=1mA f=10.7MHz Ta=25C Reverse transfer impedance Zrb () Transition frequency fT (MHz) 70 60 50 40 30 20 10 0 - 0.1 VCB=6V 10V 500 2.0 400 VCB=10V 6V 200 1.6 300 1.2 0.8 100 0.4 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 - 0.3 -1 -3 -10 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) 374 Transistor Cob -- VCB 3.2 12 yie=gie+jbie VCE=10V 2SC2778 bie -- gie 0 bre -- gre Reverse transfer susceptance bre (mS) yre=gre+jbre VCE=10V f=0.45MHz 10.7 25 Collector output capacitance Cob (pF) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 1 3 10 IE=0 f=1MHz Ta=25C Input susceptance bie (mS) 10 100 - 0.5 8 58 -1.0 - 0.4mA -1.5 -1mA -2mA 58 6 25 10.7 IE=- 0.1mA -1mA -2mA -4mA -7mA f=0.45MHz 4 -2.0 -4mA -2.5 2 100 IE=-7mA -3.0 - 0.5 0 30 100 0 4 8 12 16 20 - 0.4 - 0.3 - 0.2 - 0.1 0 Collector to base voltage VCB (V) Input conductance gie (mS) Reverse transfer conductance gre (mS) bfe -- gfe 0 boe -- goe 1.2 f=0.45MHz 10.7 Forward transfer susceptance bfe (mS) - 0.4mA - 0.1mA 0.45 10.7 25 -1mA 100 58 -2mA 25 58 -20 Output susceptance boe (mS) 100 1.0 -7mA -4mA -2mA -1mA - 0.4mA 25 0.4 10.7 0.2 f=0.45MHz 0 0.2 0.4 0.6 yoe=goe+jboe VCE=10V 0.8 1.0 IE=- 0.1mA 100 100 -4mA 10.7 -40 100 58 25 0.8 58 0.6 -60 58 IE=-7mA -80 -100 yfe=gfe+jbfe VCE=10V -120 0 20 40 60 80 100 0 Forward transfer conductance gfe (mS) Output conductance goe (mS) 375 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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